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| BU406, BU407 NPN SILICON POWER TRANSISTORS 7 A Continuous Collector Current 15 A Peak Collector Current 60 W at 25C Case Temperature B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (VBE = -2 V) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp 10 ms, duty cycle 2%. BU406 BU407 BU406 BU407 BU406 BU407 SYMBOL V CBO VCEX VCEO VEB IC ICM IB Ptot Tj Tstg VALUE 400 330 400 330 200 150 6 7 15 4 60 -55 to +150 -55 to +150 UNIT V V V V A A A W C C AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC = 30 mA IB = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 VBE = 0 IC = 0 IC = 4A (see Notes 2 and 3) (see Notes 2 and 3) (see Notes 2 and 3) f = 1 MHz f = 1 MHz (see Note 4) 6 60 12 20 1 1.2 V V MHz pF TC = 150C TC = 150C BU406 BU407 BU406 BU407 BU406 BU407 TEST CONDITIONS MIN 140 5 5 0.1 0.1 1 1 1 mA mA TYP MAX UNIT V VCE = 400 V VCE = 330 V ICES Collector-emitter cut-off current VCE = 250 V VCE = 200 V VCE = 250 V VCE = 200 V IEBO hFE VCE(sat) VBE(sat) ft Cob Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance VEB = VCE = VCE = IB = IB = VCE = VCB = 6V 10 V 10 V 0.5 A 0.5 A 5V 20 V IC = 0.5 A IC = IC = 5A 5A IC = 0.5 A IE = 0 NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. 4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [h ] = 1. FE thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.08 70 UNIT C/W C/W inductive-load-switching characteristics at 25C case temperature (unless otherwise noted) PARAMETER ts t(off) TEST CONDITIONS IC = 5 A IB(end) = 0.5A MIN (see Figures 1 and 2) TYP 2.7 MAX 750 UNIT s ns Storage time Turn off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BU406, BU407 NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION V BB+ 5.6 22 7.5 BY205 V cc = 24V 47 SET IB 100 100 +4V INPUT 0 2N5337 2N6191 TIP31 TIP31 TIP31 1 k 14.8 H TUT 50 TIP32 TIP32 Current Probes 5 pF OUTPUT BY205 240 H 22 V BB- 22 Figure 1. Inductive-Load Switching Test Circuit 64 s 42 s I B(end) 50% 0 IB t IC 0 s 0.1 A t off toff is the time for the collector current IC to decrease to 0.1 A Vfly after the collector to emitter voltage V CE has risen 3 V into its flyback excursion. V CE 0 3V Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BU406, BU407 NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 70 TCD124AA TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 50 TCD124AB 60 hFE - Typical DC Current Gain 50 hFE - Typical DC Current Gain TC = 100C tp < 300 s d < 2% VCE = 5 V 40 TC = 25C tp < 300 s d < 2% 40 TC = 25C 30 30 20 20 10 10 TC = -55C 0 0*1 VCE = 1 V VCE = 5 V VCE = 10 V 1*0 IC - Collector Current - A 10 0 0*1 1*0 IC - Collector Current - A 10 Figure 3. Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs CASE TEMPERATURE VCE(sat) - Collector-Emitter Saturation Voltage - V 0*8 0*7 0*6 0*5 0*4 0*3 0*2 0*1 0 -60 -40 -20 IC = 4 A IB = 0.5 A TCD124AC tp < 300 s d < 2% IC = 8 A IB = 2 A 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BU406, BU407 NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAD124AA IC - Collector Current - A 1*0 0*1 0.01 1*0 10 BU407 BU406 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 BU406, BU407 NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP |
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